- Date of Publication 23 May 1993
- Meeting end date 27 May 1993
- On page 202-208
- Location Vienna, Virginia, USA
- Conference/Proceedings High Frequency Power Conversion, May 1993. HFPC '93. Conference Proceedings 1993, Eighth International
The losses due to the reverse recovery of rectifiers impact significantly the performances of power converters especially at high frequency. The effect of reverse recovery time it is more severe in non isolated converters such as buck and boost topologies, due to the low impedance across the voltage source during the commutation of the diode. The current industry demand for rectifiers with high switching speed and low conduction losses has pushed the silicon based technology for power semiconductor to its performance limit. This is driving the quest for a new material such as, gallium arsine, diamond and silicon carbide, which are potential candidates for future power semiconductor devices. This paper is focused on circuit techniques, which minimize the negative effects of silicon rectifiers’ reverse recovery. There are presented two “soft” switching techniques applied to buck and boost topology, together with experimental results in a power factor correction application.